Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -2.80 mA
Technical parameters/Input capacitance (Ciss): 250pF @20V(Vds)
Technical parameters/rated power (Max): 1.65 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1.65W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management, Motor Drive&Control, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP250,115
|
Nexperia | 类似代替 | TO-261-4 |
Nexperia Si P沟道 MOSFET BSP250,115, 3 A, Vds=30 V, 4引脚 SOT-223 (SC-73)封装
|
||
BSP250,115
|
NXP | 类似代替 | TO-261-4 |
Nexperia Si P沟道 MOSFET BSP250,115, 3 A, Vds=30 V, 4引脚 SOT-223 (SC-73)封装
|
||
BSP250,135
|
NXP | 类似代替 | TO-261-4 |
BSP 系列 -30 V 250 mΩ 5 W P沟道 增强模式 D-MOS 晶体管 SOT-223
|
||
BSP250,135
|
Nexperia | 类似代替 | TO-261-4 |
BSP 系列 -30 V 250 mΩ 5 W P沟道 增强模式 D-MOS 晶体管 SOT-223
|
||
ZXMP3A16GTA
|
Diodes Zetex | 功能相似 | SOT-223 |
P沟道,Vdss=30V,Idss=4.6A
|
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