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Model BSP250,135
Description BSP 系列 -30 V 250 mΩ 5 W P沟道 增强模式 D-MOS 晶体管 SOT-223
Product QR code
Brand: NXP
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.96  yuan 6.96yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9775) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.65 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

3A

 

Technical parameters/Input capacitance (Ciss):

250pF @20V(Vds)

 

Technical parameters/rated power (Max):

1.65 W

 

Technical parameters/dissipated power (Max):

1.65W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Width:

3.7 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP250,115 BSP250,115 Nexperia 类似代替 TO-261-4
NXP BSP250,115 晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
PDF
BSP250,115 BSP250,115 NXP 类似代替 TO-261-4
NXP BSP250,115 晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
PDF
ZXMP3A16GTA ZXMP3A16GTA Diodes Zetex 功能相似 SOT-223
P沟道,Vdss=30V,Idss=4.6A
PDF

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