Technical parameters/number of channels: 2
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.78 Ω
Technical parameters/dissipated power: 410 mW
Technical parameters/threshold voltage: 20 V
Technical parameters/input capacitance: 23 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 23pF @30V(Vds)
Technical parameters/rated power (Max): 410 mW
Technical parameters/descent time: 2.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 410 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management, portable equipment
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | SOT-363 |
Dual N-channel mTrenchMOS standard level FET
|
||
PMGD780SN
|
NXP | 功能相似 | SOT-363 |
Dual N-channel mTrenchMOS standard level FET
|
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