Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.49A
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | SOT-363 |
Trans MOSFET N-CH 60V 0.49A 6Pin TSSOP
|
||
PMGD780SN
|
NXP | 功能相似 | SOT-363 |
Trans MOSFET N-CH 60V 0.49A 6Pin TSSOP
|
||
PMGD780SN,115
|
Nexperia | 功能相似 | SOT-363-6 |
NXP PMGD780SN,115 双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
|
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