Technical parameters/working voltage: 9 V
Technical parameters/breakdown voltage: 10 V
Technical parameters/clamp voltage: 15.4 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ9.0CA-E3/52
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General Instruments Consortium | 完全替代 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
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General Instrument | 完全替代 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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SMBJ9.0CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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SMBJ9.0CA-E3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 9V 600W 2Pin SMB T/R
|
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SMBJ9.0CA-M3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 9.0V 800W Bidir TransZorb 5% Tol
|
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