Technical parameters/dissipated power: 1 W
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 10 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DO-214AA-2
External dimensions/packaging: DO-214AA-2
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ9.0CA-E3/52
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General Instruments Consortium | 类似代替 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
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General Instrument | 类似代替 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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SMBJ9.0CA-E3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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SMBJ9.0CA-E3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 9V 600W 2Pin SMB T/R
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SMBJ9.0CAHE3/5B
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Bi-Dir 9V 600W 2Pin SMB T/R
|
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