Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0055 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 104 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 2866pF @50V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 104 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.25 mm
External dimensions/width: 5.26 mm
External dimensions/height: 1.12 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Computers & Computer Peripherals, Power Management, Industrial, Computer and Computer Peripherals, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR804DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK SO |
VISHAY SIR804DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0059 ohm, 10 V, 1.2 V
|
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