Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0059 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 104 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 2450pF @50V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6250 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK SO
External dimensions/height: 1.04 mm
External dimensions/packaging: PowerPAK SO
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Communications & Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR870ADP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SIR870ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
|
||
SIR870ADP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SO-8 |
VISHAY SIR870ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
|
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