Technical parameters/drain source resistance: 4.8 mΩ
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7718DN-T1-GE3
|
Vishay Semiconductor | 类似代替 | 1212 |
MOSFET N-CH 30V 35A 1212-8
|
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