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Model SI7718DN-T1-GE3
Description VISHAY SI7718DN-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 35A POWERPAK
Product QR code
Brand: Vishay Semiconductor
Packaging 1212
Delivery time
Packaging method
Standard packaging quantity 1
6.34  yuan 6.34yuan
10+:
$ 7.6032
100+:
$ 7.2230
500+:
$ 6.9696
1000+:
$ 6.9569
2000+:
$ 6.9062
5000+:
$ 6.8429
7500+:
$ 6.7922
10000+:
$ 6.7668
Quantity
10+
100+
500+
1000+
2000+
Price
$7.6032
$7.2230
$6.9696
$6.9569
$6.9062
Price $ 7.6032 $ 7.2230 $ 6.9696 $ 6.9569 $ 6.9062
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2254) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 8.2 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.7 W

Technical parameters/threshold voltage: 2.5 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: 1212

External dimensions/packaging: 1212

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIS402DN-T1-GE3 SIS402DN-T1-GE3 Vishay Siliconix 类似代替 1212-8
VISHAY SIS402DN-T1-GE3 场效应管, MOSFET, N通道, 30V, 35A POWERPAK, 整卷
PDF
SIS402DN-T1-GE3 SIS402DN-T1-GE3 Vishay Intertechnology 类似代替 1212
VISHAY SIS402DN-T1-GE3 场效应管, MOSFET, N通道, 30V, 35A POWERPAK, 整卷
PDF

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