Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0047 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 4.2 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7882DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7882DP-T1-GE3 场效应管, MOSFET, N通道, 12V, 22A, SOIC
|
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