Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.9W (Ta)
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 22.0 A
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7882DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET Transistor, N Channel, 22A, 12V, 5.5mohm, 4.5V, 1.4V
|
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