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Model SI7882DP-T1-E3
Description MOSFET Transistor, N Channel, 22A, 12V, 5.5mohm, 4.5V, 1.4V
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5578) Minimum order quantity(1)
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Technical parameters/drain source resistance: 5.50 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.9W (Ta)

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/Continuous drain current (Ids): 13.0 A

Technical parameters/dissipated power (Max): 1.9W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 12V 13A PPAK SO-8
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