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Model SIR492DP-T1-GE3
Description NChannel 12-V (D-S) MOSFET N-Channel 12-V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.39  yuan 5.39yuan
10+:
$ 6.4704
100+:
$ 6.1469
500+:
$ 5.9312
1000+:
$ 5.9204
2000+:
$ 5.8773
5000+:
$ 5.8234
7500+:
$ 5.7802
10000+:
$ 5.7587
Quantity
10+
100+
500+
1000+
2000+
Price
$6.4704
$6.1469
$5.9312
$5.9204
$5.8773
Price $ 6.4704 $ 6.1469 $ 5.9312 $ 5.9204 $ 5.8773
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9968) Minimum order quantity(10)
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Technical parameters/drain source resistance: 4.7 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 4.2 W

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/Continuous drain current (Ids): 27A

Technical parameters/Input capacitance (Ciss): 3720pF @6V(Vds)

Technical parameters/rated power (Max): 36 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -50 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI7882DP-T1-GE3 场效应管, MOSFET, N通道, 12V, 22A, SOIC
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