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Description VISHAY SIR166DP-T1-GE3 Transistor, MOSFET, N-channel, 40 A, 30 V, 2600 µ ohm, 10 V, 1.2 V
Product QR code
Packaging SOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.51  yuan 4.51yuan
5+:
$ 6.0831
25+:
$ 5.6325
50+:
$ 5.3171
100+:
$ 5.1819
500+:
$ 5.0918
2500+:
$ 4.9791
5000+:
$ 4.9341
10000+:
$ 4.8665
Quantity
5+
25+
50+
100+
500+
Price
$6.0831
$5.6325
$5.3171
$5.1819
$5.0918
Price $ 6.0831 $ 5.6325 $ 5.3171 $ 5.1819 $ 5.0918
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4751) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0026 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 3340pF @15V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5000 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOP

External dimensions/height: 1.07 mm

External dimensions/packaging: SOP

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR804DP-T1-GE3 SIR804DP-T1-GE3 Vishay Semiconductor 类似代替 PowerPAK SO
MOSFET N-CH 100V 60A PPAK SO-8
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