Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0026 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 3340pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5000 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/height: 1.07 mm
External dimensions/packaging: SOP
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR804DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAK SO |
MOSFET N-CH 100V 60A PPAK SO-8
|
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