Technical parameters/drain source resistance: 0.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 156 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 16 ns
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP8N50D-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 500V 8.7A TO220AB
|
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