Technical parameters/drain source resistance: 0.15 Ω
Technical parameters/dissipated power: 227 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 1920pF @100V(Vds)
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 227W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.51 mm
External dimensions/width: 4.65 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AOTF20S60
|
Alpha & Omega Semiconductor | 功能相似 | TO-220 |
二极管与整流器
|
||
STP23NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP23NM60ND 功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
|
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