Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 325pF @100V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDF05N50ZG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR NDF05N50ZG 场效应管, MOSFET, N沟道, 500V 5A TO-220
|
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