Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 30 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 6 ns
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS9410A
|
ON Semiconductor | 功能相似 | SOIC |
单N沟道增强型场效应晶体管 Single N-Channel Enhancement Mode Field Effect Transistor
|
||
NDS9410A
|
Fairchild | 功能相似 | SOIC-8 |
单N沟道增强型场效应晶体管 Single N-Channel Enhancement Mode Field Effect Transistor
|
||
SI9410DY
|
Vishay Intertechnology | 类似代替 |
N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistor
|
|||
SI9410DY
|
Philips | 类似代替 |
N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistor
|
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