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Model SI7686DP-T1-GE3
Description MOSFET 30V 35A 37.9W 9.5mohm @ 10V
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.12  yuan 6.12yuan
10+:
$ 7.3428
100+:
$ 6.9757
500+:
$ 6.7309
1000+:
$ 6.7187
2000+:
$ 6.6697
5000+:
$ 6.6085
7500+:
$ 6.5596
10000+:
$ 6.5351
Quantity
10+
100+
500+
1000+
2000+
Price
$7.3428
$6.9757
$6.7309
$6.7187
$6.6697
Price $ 7.3428 $ 6.9757 $ 6.7309 $ 6.7187 $ 6.6697
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9855) Minimum order quantity(10)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5W (Ta), 37.9W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/Input capacitance (Ciss): 1220pF @15V(Vds)

Technical parameters/dissipated power (Max): 5W (Ta), 37.9W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SIR472DP-T1-GE3 场效应管, MOSFET, N沟道, 30V, 20A, SOIC
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