Technical parameters/dissipated power: | 3.9W (Ta), 29.8W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 820pF @15V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.9W (Ta), 29.8W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Packaging: | SO-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7720DN-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1212 |
MOSFET N-CH 30V 12A 1212-8
|
||
SI7720DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
MOSFET N-CH 30V 12A 1212-8
|
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