Technical parameters/dissipated power: 1.8W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7860ADP-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 11A PPAK SO-8
|
|||
|
|
VISHAY | 完全替代 | PowerPAK |
MOSFET N-CH 30V 11A PPAK SO-8
|
||
SI7860DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET 30V 18A 5W 8mohm @ 10V
|
||
SI7860DP-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET 30V 18A 5W 8mohm @ 10V
|
||
|
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET 30V 18A 5W 8mohm @ 10V
|
||
SI7860DP-T1-GE3
|
VISHAY | 完全替代 | PowerPAK |
MOSFET 30V 18A 5W 8mohm @ 10V
|
||
SI7860DP-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET 30V 18A 5W 8mohm @ 10V
|
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