Technical parameters/drain source resistance: 8 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1800 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 12 ns
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH7914TRPBF
|
International Rectifier | 功能相似 | PowerVQFN-8 |
INFINEON IRFH7914TRPBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.8 V
|
||
SIR462DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SIR462DP-T1-GE3 晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
|
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