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Model SIR462DP-T1-GE3

Description N通道30 -V （D -S ）的MOSFET N-Channel 30-V (D-S) MOSFET

Brand: VISHAY

Packaging SO-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	6.5 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	4.8 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	30.0 A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	1155pF @15V(Vds)
Technical parameters/rated power (Max):	41.7 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	4.8 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SO-8
Dimensions/Length:	4.9 mm
Dimensions/Width:	5.89 mm
Dimensions/Height:	1.04 mm
Dimensions/Packaging:	SO-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

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	SI7386DP-T1-E3	VISHAY	类似代替	SO-8	SI7386DP-T1-E3 编带	PDF
	SI7386DP-T1-GE3	Vishay Siliconix	功能相似	SO-8	场效应管, MOSFET, N沟道, 30V, 19A, SOIC	PDF