Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0058 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 19.0 A
Technical parameters/rise time: 9 ns
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN7R0-30YL,115
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Nexperia | 功能相似 | SOT-669 |
Nexperia Si N沟道 MOSFET PSMN7R0-30YL,115, 76 A, Vds=30 V, 4引脚 SOT-669封装
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SI7386DP-T1-GE3
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场效应管, MOSFET, N沟道, 30V, 19A, SOIC
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