Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0062 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 46 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 58.0 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 3540pF @20V(Vds)
Technical parameters/rated power (Max): 46 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4.6W (Ta), 46W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR422DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
|
||
SIR422DP-T1-GE3
|
Vishay Siliconix | 类似代替 | TO-262-3 |
VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
|
||
SIR422DP-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
|
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