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Model SIR422DP-T1-GE3
Description VISHAY SIR422DP-T1-GE3 晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 µohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging PowerPAKSO-8
Delivery time
Packaging method
Standard packaging quantity 1
2.16  yuan 2.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4199) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0054 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

34.7 W

 

Technical parameters/threshold voltage:

1.2 V

 

Technical parameters/Input capacitance:

1785pF @20V

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/rise time:

84 ns

 

Technical parameters/descent time:

11 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerPAKSO-8

 

Dimensions/Length:

5.99 mm

 

Dimensions/Height:

1.07 mm

 

Dimensions/Packaging:

PowerPAKSO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Vishay Semiconductor 类似代替 PowerPAKSO-8
VISHAY SI7884BDP-T1-GE3. 晶体管, N沟道
PDF
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 VISHAY 类似代替 SO-8
VISHAY SI7884BDP-T1-GE3. 晶体管, N沟道
PDF

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