Technical parameters/drain source resistance: 0.007 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.8 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -18.0 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7149ADP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
|
||
SI7149ADP-T1-GE3
|
VISHAY | 功能相似 | SOP-8 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
|
||
SI7459DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET P-CH 30V 13A PPAK SO-8
|
||
SI7459DP-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 30V 13A PPAK SO-8
|
|||
SI7459DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 30V 13A PPAK SO-8
|
||
SI7459DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET 30V 22A 5.4W 6.8mohm @ 10V
|
||
SI7459DP-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAKSO-8 |
MOSFET 30V 22A 5.4W 6.8mohm @ 10V
|
||
|
|
VISHAY | 类似代替 | SO-8 |
VISHAY SI7491DP-T1-GE3 场效应管, MOSFET, P通道, -30V, 18A, SOIC
|
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