Technical parameters/drain source resistance: 0.0056 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -22.0 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7149ADP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
|
||
SI7149ADP-T1-GE3
|
VISHAY | 功能相似 | SOP-8 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
|
||
SI7459DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET 30V 22A 5.4W 6.8mohm @ 10V
|
||
SI7459DP-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAKSO-8 |
MOSFET 30V 22A 5.4W 6.8mohm @ 10V
|
||
SI7491DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 30V 11A PPAK SO-8
|
||
|
|
VISHAY | 类似代替 | SO-8 |
MOSFET P-CH 30V 11A PPAK SO-8
|
||
SI7491DP-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET P-CH 30V 11A PPAK SO-8
|
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