Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.046 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 2.3 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 7.2A
Technical parameters/Input capacitance (Ciss): 840pF @35V(Vds)
Technical parameters/rated power (Max): 52 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPak-1212-8
External dimensions/packaging: PowerPak-1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7812DN-T1-E3
|
Vishay Semiconductor | 类似代替 | 1212 |
VISHAY SI7812DN-T1-E3 晶体管, MOSFET, N沟道, 16 A, 75 V, 0.031 ohm, 10 V, 2.3 V
|
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