Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.031 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 2.3 V
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/Input capacitance (Ciss): 840pF @35V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3800 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/height: 1.04 mm
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7812DN-T1-GE3
|
Vishay Semiconductor | 类似代替 | 1212 |
VISHAY SI7812DN-T1-GE3 场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
|
||
SI7812DN-T1-GE3
|
VISHAY | 类似代替 | PowerPAK-1212-8 |
VISHAY SI7812DN-T1-GE3 场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
|
||
|
|
Vishay Intertechnology | 类似代替 | PowerPAK-1212-8 |
VISHAY SI7812DN-T1-GE3 场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
|
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