Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0125 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 18A
Technical parameters/rise time: 34 ns
Technical parameters/Input capacitance (Ciss): 1870pF @15V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 3.5W (Ta), 27.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-1212-8
External dimensions/packaging: PowerPAK-1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7423DN-T1-E3
|
Vishay Semiconductor | 功能相似 | 1212 |
VISHAY SI7423DN-T1-E3 场效应管, MOSFET, P沟道, -30V, 11.7A, POWERPAK
|
||
SI7423DN-T1-E3
|
Vishay Siliconix | 功能相似 | 1212 |
VISHAY SI7423DN-T1-E3 场效应管, MOSFET, P沟道, -30V, 11.7A, POWERPAK
|
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