Technical parameters/drain source resistance: 0.014 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -11.7 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7121ADN-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK-1212-8 |
VISHAY SI7121ADN-T1-GE3 场效应管, MOSFET, P沟道, -30V, -18A, POWERPAK1212-8
|
||
SI7121ADN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
VISHAY SI7121ADN-T1-GE3 场效应管, MOSFET, P沟道, -30V, -18A, POWERPAK1212-8
|
||
SI7121ADN-T1-GE3
|
Vishay Siliconix | 功能相似 | 1212-8 |
VISHAY SI7121ADN-T1-GE3 场效应管, MOSFET, P沟道, -30V, -18A, POWERPAK1212-8
|
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