Technical parameters/dissipated power: 104 W
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 8650pF @15V(Vds)
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6.25W (Ta), 104W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7145DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
P通道30 -V (D -S )的MOSFET P-Channel 30-V (D-S) MOSFET
|
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