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Model SI7145DP-T1-GE3
Description PChannel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.13  yuan 7.13yuan
10+:
$ 8.5524
100+:
$ 8.1248
500+:
$ 7.8397
1000+:
$ 7.8254
2000+:
$ 7.7684
5000+:
$ 7.6972
7500+:
$ 7.6401
10000+:
$ 7.6116
Quantity
10+
100+
500+
1000+
2000+
Price
$8.5524
$8.1248
$7.8397
$7.8254
$7.7684
Price $ 8.5524 $ 8.1248 $ 7.8397 $ 7.8254 $ 7.7684
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1798) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0021 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 6.25 W

Technical parameters/threshold voltage: 2.3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): -60.0 A

Technical parameters/Input capacitance (Ciss): 15660pF @15V(Vds)

Technical parameters/rated power (Max): 104 W

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7135DP-T1-GE3 SI7135DP-T1-GE3 VISHAY 类似代替 SO-8
-30V,-60A,P沟道MOSFET
PDF
SI7135DP-T1-GE3 SI7135DP-T1-GE3 Vishay Intertechnology 类似代替
-30V,-60A,P沟道MOSFET
PDF
SI7135DP-T1-GE3 SI7135DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
-30V,-60A,P沟道MOSFET
PDF

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