Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0252 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 4.1 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK SO
External dimensions/packaging: PowerPAK SO
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7454DDP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SI7454DDP-T1-GE3 晶体管, MOSFET, N沟道, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
|
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