Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.027 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 4.1 W |
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Technical parameters/threshold voltage: | 1.5 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 21A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 550pF @50V(Vds) |
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Technical parameters/rated power (Max): | 4.1 W |
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Technical parameters/descent time: | 9 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 29.7 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SO-8 |
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Dimensions/Length: | 6.25 mm |
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Dimensions/Width: | 5.26 mm |
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Dimensions/Height: | 1.12 mm |
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Dimensions/Packaging: | SO-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2500 |
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Other/Manufacturing Applications: | Power Management, Communication and Networking, Industrial, |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR432DP-T1-GE3
|
Vishay Semiconductor | 功能相似 |
晶体管, N沟道
|
|||
SIR432DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
晶体管, N沟道
|
||
SIR432DP-T1-GE3
|
VISHAY | 功能相似 | PowerPAK |
晶体管, N沟道
|
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