Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 7.6 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.78 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 35.0 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RQ3E180BNTB
|
ROHM Semiconductor | 功能相似 | PowerVDFN-8 |
场效应管(MOSFET) RQ3E180BNTB HSMT-8
|
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