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Model RQ3E180BNTB
Description Field Effect Transistor (MOSFET) RQ3E180BNTB HSMT-8
Product QR code
Brand: ROHM Semiconductor
Packaging PowerVDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.16  yuan 1.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6257) Minimum order quantity(1)
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Technical parameters/dissipated power:

2 W

 

Technical parameters/Input capacitance (Ciss):

3500pF @15V(Vds)

 

Technical parameters/dissipated power (Max):

2W (Ta), 20W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerVDFN-8

 

Dimensions/Packaging:

PowerVDFN-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD17579Q3AT CSD17579Q3AT TI 功能相似 VSONP-8
N 通道 NexFET™ 功率 MOSFET，Texas Instruments ### MOSFET 晶体管，Texas Instruments

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