Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rated power (Max): 1.7 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK
External dimensions/packaging: PowerPAK
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7366DP-T1-GE3
|
VISHAY | 完全替代 | SO-8 |
MOSFET N-CH 20V 13A PPAK SO-8
|
||
SI7366DP-T1-GE3
|
Vishay Intertechnology | 完全替代 | SO-8 |
MOSFET N-CH 20V 13A PPAK SO-8
|
||
SIR424DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
SiR172DP Series N-Channel 20V 0.0074Ω 41.7W SMT Mosfet - PowerPAK® SO-8
|
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