Technical parameters/drain source resistance: 0.0046 Ω
Technical parameters/dissipated power: 41.7 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1250pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 41.7 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 6.25 mm
External dimensions/width: 5.26 mm
External dimensions/height: 1.12 mm
External dimensions/packaging: PowerPAKSO-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7366DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SI7366DP-T1-GE3 场效应管, MOSFET, N通道, 20V, 20A, SOIC, 整卷
|
||
SI7366DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
VISHAY SI7366DP-T1-GE3 场效应管, MOSFET, N通道, 20V, 20A, SOIC, 整卷
|
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