Technical parameters/drain source resistance: 0.063 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.40 A
Technical parameters/rise time: 10 ns
Technical parameters/thermal resistance: 126℃/W (RθJA)
Technical parameters/rated power (Max): 830 mW
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/length: 4.5 mm
External dimensions/width: 3 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6928DQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
MOSFET N-CH DUAL 30V 4A 8TSSOP
|
||
SI6928DQ-T1-E3
|
Vishay Semiconductor | 类似代替 | TSSOP |
MOSFET N-CH DUAL 30V 4A 8TSSOP
|
||
SI6954ADQ-T1-GE3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
Single N-Channel 30V 0.053Ω 0.83W Surface Mount Power Mosfet - TSSOP-8
|
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