Technical parameters/drain source resistance: 50.0 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6954ADQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
Trans MOSFET N-CH 30V 3.1A 8Pin TSSOP T/R
|
||
SI6954ADQ-T1-GE3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
Single N-Channel 30V 0.053Ω 0.83W Surface Mount Power Mosfet - TSSOP-8
|
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