Technical parameters/drain source resistance: 0.03 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/thermal resistance: 110℃/W (RθJA)
Technical parameters/rated power (Max): 830 mW
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/length: 4.5 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXMN3G32DN8TA
|
Diodes | 功能相似 | SOIC-8 |
ZXMN3G32 系列 30 V 0.028 Ohm 双 N 沟道 增强模式 MOSFET - SOIC-8
|
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