Technical parameters/drain source resistance: 90.0 mΩ
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/drain source voltage (Vds): -8.00 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5905DC-T1
|
VISHAY | 功能相似 | CHIP |
MOSFET 8V 4.1A 2.1W
|
||
SI5905DC-T1
|
Vishay Siliconix | 功能相似 |
MOSFET 8V 4.1A 2.1W
|
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