Technical parameters/drain source resistance: 90.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -3.00 A to 3.00 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Chip
External dimensions/packaging: Chip
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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