Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.05 W
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -7.40 A
Technical parameters/thermal resistance: 120℃/W (RθJA)
Technical parameters/descent time: 150 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/length: 4.5 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: TSSOP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6463BDQ-T1-GE3
|
VISHAY | 类似代替 | TSSOP-8 |
MOSFET 20V 7.4A 1.5W 15mohm @ 4.5V
|
||
ZXM66P02N8TA
|
Zetex | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 20V 8A 8Pin SOIC T/R
|
||
ZXM66P02N8TA
|
Diodes | 功能相似 | SOIC-8 |
Trans MOSFET P-CH 20V 8A 8Pin SOIC T/R
|
||
ZXM66P02N8TC
|
Zetex | 功能相似 |
MOSFET P-CH 20V 6.4A 8SOIC
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