Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -7.60 A
Technical parameters/drain source resistance: 45.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 2.07 nF
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/rise time: 44.3 ns
Technical parameters/Input capacitance (Ciss): 2068pF @15V(Vds)
Technical parameters/rated power (Max): 1.56 W
Technical parameters/descent time: 98.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.56W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXM66P02N8TC
|
Zetex | 类似代替 |
MOSFET P-CH 20V 6.4A 8SOIC
|
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