Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.5W (Ta), 10.9W (Tc)
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -8.00 A
Technical parameters/Input capacitance (Ciss): 665pF @10V(Vds)
Technical parameters/dissipated power (Max): 3.5W (Ta), 10.9W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5481DU-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET P-CH 20V 12A PPAK CHIPFET
|
|||
|
|
Vishay Siliconix | 功能相似 |
MOSFET P-CH 20V 12A PPAK CHIPFET
|
|||
SI5481DU-T1-GE3
|
VISHAY | 功能相似 | PowerPAK |
MOSFET P-CH 20V 12A PPAK CHIPFET
|
||
SI5485DU-T1-GE3
|
VISHAY | 功能相似 | PowerPAK |
MOSFET 20V 12A 31W 25mohm @ 4.5V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review