Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.1W (Ta), 17.8W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/Input capacitance (Ciss): 1610pF @10V(Vds)
Technical parameters/dissipated power (Max): 3.1W (Ta), 17.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5459DU-T1-GE3
|
Vishay Siliconix | 功能相似 |
Si5459DU Series 20V 8A 0.052Ω P-Channel MOSFET - PowerPAK® ChipFET
|
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